UnitedSiC UJ3N Normally-On JFET Transistors
United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V. This series exhibits ultra-low on resistance (RDS(ON)), as low as 25mΩ, and low gate charge (QG) allowing for low conduction and reduced switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0V is also ideal for current protection circuits without the need for active control. The UJ3N JFET Transistors are also commonly used in series connection with a Si-MOSFET as robust "Supercascodes", which give all the advantages of wide band-gap technology with very high operating voltages and easy gate drive.
Features
Ultra-low on resistance (RDS(ON)) and gate charge (QG)Voltage controlledMaximum operating temperature of 175°CExtremely fast switching not dependent on temperature
Applications
Over current protection circuitsDC-AC invertersSwitch mode power supplies
Product Catalogs
UnitedSiC Product Selector Guide: SiC FETs, SiC JFETs, and SiC Schottky Diodes
Application Notes
Cascode Configuration Eases Challenges of Applying SiC JFETsOverview of United Silicon Carbide Normally-On JFET
Unitedsic Newest
United Silicon Carbide UF3C High-Performance SiC FETs are cascode products that co-package high-performance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Date: 2018-10-29United Silicon Carbide UJ3N JFET Transistors are high-performance, SiC Normally-On Junction Gate Field-Effect Transistors with options ranging from 650V to 1700V.
Date: 2018-10-29UnitedSiC SiC FETs are UJ3C and UF3C series of silicon carbide FETs that are based on a unique cascode configuration. Now Available at Mouser.
Date: 2018-08-13UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of SiC superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).
Date: 2018-04-26