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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. LPDDR4X
  5. K4U2E3S4AA-GUCL

Samsung Semiconductor - K4U2E3S4AA-GUCL

KEY Part #: K7359740

[26054पीसी स्टक]

    भाग संख्या:
    K4U2E3S4AA-GUCL
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: DDR4, LPDDR5, LPDDR4X, HBM Aquabolt, HBM Flarebolt, SLC Nand, MODULE and LPDDR4 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4U2E3S4AA-GUCL electronic components. K4U2E3S4AA-GUCL can be shipped within 24 hours after order. If you have any demands for K4U2E3S4AA-GUCL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4U2E3S4AA-GUCL उत्पाद गुणहरू

    भाग संख्या : K4U2E3S4AA-GUCL
    निर्माता : Samsung Semiconductor
    वर्णन : 12 Gb x32 4266 Mbps 1.8 / 1.1 / 0.6 V -40 ~ 125 °C 200FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 12 Gb
    Org। : x32
    गति : 4266 Mbps
    भोल्टेज : 1.8 / 1.1 / 0.6 V
    अस्थायी। : -40 ~ 125 °C
    प्याकेज : 200FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Unlocking the Power of Cloud Computing
    [Video] 5G memory solutions : 5G. All in the Memory.
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Mass Production of Fifth-Generation V-NAND has Started
    5G and Memory - from Connected Thinking to Connected Living
    Inside the building blocks of the 5G future
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Speed for the next generation of mobile devices
    Autonomous Driving and the Quest for Safety
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    The Ultra-Low Latency SSD, Z-SSD
    तपाईलाई पनि चासो लाग्न सक्छ
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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

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      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    तातो पार्ट्स