Samsung Semiconductor - M471B5173EB0-YMA

KEY Part #: K7359966

[24924पीसी स्टक]

भाग संख्या:: M471B5173EB0-YMA

निर्माता:: Samsung Semiconductor

विस्तृत विवरण:: DDR3 SODIMM 4 GB 1R x 8 1866 Mbps 1.35 V 204 (512M x 8) x 8 EOL.

Manufacturer's standard lead time:: स्टक मा

आफ्नो जीवन:: एक वर्ष

बाट चिप:: हंगकंग

RoHS:

भुक्तानी विधि:

ढुवानी मार्ग:

परिवार कोटिहरू:: KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: LPDDR5, LPDDR4, LPDDR3, DDR4, GDDR5, MODULE, HBM Aquabolt and SLC Nand ...

प्रतिस्पर्धी लाभ:: We specialize in Samsung Semiconductor M471B5173EB0-YMA electronic components. M471B5173EB0-YMA can be shipped within 24 hours after order. If you have any demands for M471B5173EB0-YMA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

M471B5173EB0-YMA उत्पाद गुणहरू

भाग संख्या : M471B5173EB0-YMA

निर्माता : Samsung Semiconductor

वर्णन : DDR3 SODIMM 4 GB 1R x 8 1866 Mbps 1.35 V 204 (512M x 8) x 8 EOL

श्रृंखला : DDR3

DDR : DDR3

Dimm प्रकार : SODIMM

घनत्व : 4 GB

रैंक संगठन x। : 1R x 8

गति : 1866 Mbps

भोल्टेज : 1.35 V

पिन को न : 204

घटक संगठन : (512M x 8) x 8

उत्पादन स्थिति : EOL

ताजा समाचारहरू

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

5G and Memory - from Connected Thinking to Connected Living

Autonomous Driving and the Quest for Safety

Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing

[Video] 5G memory solutions : 5G. All in the Memory.

Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones

तपाईलाई पनि चासो लाग्न सक्छ

MZPJB800HMGC

Samsung Semiconductor

SZ985 PCIe Gen3 x4 HHHL 800 GB 3400 MB/s 3000 MB/s 750K IOPS 170K IOPS Mass Production.
MZILT1T9HAJQ

Samsung Semiconductor

PM1643 SAS 12.0 Gbps 2.5 inch 1.92 TB 2100 MB/s 1800 MB/s 440K IOPS 46K IOPS 1(5yrs) Mass Production.
MZILT3T8HALS

Samsung Semiconductor

PM1643 SAS 12.0 Gbps 2.5 inch 3.84 TB 2100 MB/s 2000 MB/s 450K IOPS 58K IOPS 1(5yrs) Mass Production.
MZILT7T6HMLA

Samsung Semiconductor

PM1643 SAS 12.0 Gbps 2.5 inch 7.68 TB 2100 MB/s 2000 MB/s 400K IOPS 70K IOPS 1(5yrs) Mass Production.
MZILT960HAHQ

Samsung Semiconductor

PM1643 SAS 12.0 Gbps 2.5 inch 960 GB 2100 MB/s 1000 MB/s 350K IOPS 30K IOPS 1(5yrs) Mass Production.
MZPLL12THMLA

Samsung Semiconductor

PM1725b PCIe Gen3 x8 HHHL 12.8 TB 6300 MB/s 3300 MB/s 940K IOPS 110K IOPS 3(5yrs) Mass Production.

तातो पार्ट्स

English नेपाली