Samsung Semiconductor - M471B5173EB0-YMA

KEY Part #: K7359966

[24924पीसी स्टक]

भाग संख्या:: M471B5173EB0-YMA

निर्माता:: Samsung Semiconductor

विस्तृत विवरण:: DDR3 SODIMM 4 GB 1R x 8 1866 Mbps 1.35 V 204 (512M x 8) x 8 EOL.

Manufacturer's standard lead time:: स्टक मा

आफ्नो जीवन:: एक वर्ष

बाट चिप:: हंगकंग

RoHS:

भुक्तानी विधि:

ढुवानी मार्ग:

परिवार कोटिहरू:: KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: GDDR6, LPDDR3, SLC Nand, GDDR5, MODULE, LPDDR4X, HBM Flarebolt and LPDDR4 ...

प्रतिस्पर्धी लाभ:: We specialize in Samsung Semiconductor M471B5173EB0-YMA electronic components. M471B5173EB0-YMA can be shipped within 24 hours after order. If you have any demands for M471B5173EB0-YMA, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

M471B5173EB0-YMA उत्पाद गुणहरू

भाग संख्या : M471B5173EB0-YMA

निर्माता : Samsung Semiconductor

वर्णन : DDR3 SODIMM 4 GB 1R x 8 1866 Mbps 1.35 V 204 (512M x 8) x 8 EOL

श्रृंखला : DDR3

DDR : DDR3

Dimm प्रकार : SODIMM

घनत्व : 4 GB

रैंक संगठन x। : 1R x 8

गति : 1866 Mbps

भोल्टेज : 1.35 V

पिन को न : 204

घटक संगठन : (512M x 8) x 8

उत्पादन स्थिति : EOL

ताजा समाचारहरू

Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology

Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology

Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day

5G and Memory - from Connected Thinking to Connected Living

Autonomous Driving and the Quest for Safety

Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing

[Video] 5G memory solutions : 5G. All in the Memory.

Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time

Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP

Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM

Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology

Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones

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