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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. MODULE
  5. M393B1G73EB0-CMA

Samsung Semiconductor - M393B1G73EB0-CMA

KEY Part #: K7359923

[26714पीसी स्टक]

    भाग संख्या:
    M393B1G73EB0-CMA
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    DDR3 RDIMM 8 GB 2R x 8 1866 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: DDR3, SLC Nand, GDDR5, LPDDR4X, HBM Flarebolt, LPDDR3, LPDDR5 and GDDR6 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor M393B1G73EB0-CMA electronic components. M393B1G73EB0-CMA can be shipped within 24 hours after order. If you have any demands for M393B1G73EB0-CMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393B1G73EB0-CMA उत्पाद गुणहरू

    भाग संख्या : M393B1G73EB0-CMA
    निर्माता : Samsung Semiconductor
    वर्णन : DDR3 RDIMM 8 GB 2R x 8 1866 Mbps 1.5 V / 1.35 V 240 (512M x 8) x 18 Mass Production
    श्रृंखला : DDR3
    DDR : DDR3
    Dimm प्रकार : RDIMM
    घनत्व : 8 GB
    रैंक संगठन x। : 2R x 8
    गति : 1866 Mbps
    भोल्टेज : 1.5 V / 1.35 V
    पिन को न : 240
    घटक संगठन : (512M x 8) x 18
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Unlocking the Power of Cloud Computing
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Autonomous Driving and the Quest for Safety
    Inside the building blocks of the 5G future
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Bringing Artificial Intelligence to Devices Everywhere
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
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