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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

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  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. DDR3
  5. K4B1G1646I-BHMA

Samsung Semiconductor - K4B1G1646I-BHMA

KEY Part #: K7359643

[21607पीसी स्टक]

    भाग संख्या:
    K4B1G1646I-BHMA
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: LPDDR3, GDDR6, MODULE, LPDDR4X, LPDDR4, HBM Aquabolt, DDR4 and SLC Nand ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4B1G1646I-BHMA electronic components. K4B1G1646I-BHMA can be shipped within 24 hours after order. If you have any demands for K4B1G1646I-BHMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G1646I-BHMA उत्पाद गुणहरू

    भाग संख्या : K4B1G1646I-BHMA
    निर्माता : Samsung Semiconductor
    वर्णन : 1 Gb 64M x 16 1866 Mbps 1.35 V -40 ~ 105 °C 96FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 1 Gb
    Org। : 64M x 16
    गति : 1866 Mbps
    भोल्टेज : 1.35 V
    अस्थायी। : -40 ~ 105 °C
    प्याकेज : 96FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Inside the building blocks of the 5G future
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Evolving Mobile Solutions: Samsung at MWC 2018
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    [Video] 5G memory solutions : 5G. All in the Memory.
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    • K3UH6H60BM-EGCL

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    • K3UH7H70AM-AGCL

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