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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

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  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BYMA

Samsung Semiconductor - K4B2G0846F-BYMA

KEY Part #: K7359655

[22178पीसी स्टक]

    भाग संख्या:
    K4B2G0846F-BYMA
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: DDR3, GDDR6, LPDDR4X, LPDDR4, LPDDR3, SLC Nand, HBM Aquabolt and GDDR5 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4B2G0846F-BYMA electronic components. K4B2G0846F-BYMA can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYMA उत्पाद गुणहरू

    भाग संख्या : K4B2G0846F-BYMA
    निर्माता : Samsung Semiconductor
    वर्णन : 2 Gb 256M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 2 Gb
    Org। : 256M x 8
    गति : 1866 Mbps
    भोल्टेज : 1.35 V
    अस्थायी। : 0 ~ 85 °C
    प्याकेज : 78FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Automotive Driven by Small Packages Under the Hood
    Autonomous Driving and the Quest for Safety
    Samsung Z-SSD SZ985
    [Video] 5G memory solutions : 5G. All in the Memory.
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    तपाईलाई पनि चासो लाग्न सक्छ
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      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

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    • K3UH6H60BM-AGCL

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    • K3UH6H60BM-EGCL

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      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

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    तातो पार्ट्स