यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski

यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. DDR3
  5. K4B1G0846I-BYMA

Samsung Semiconductor - K4B1G0846I-BYMA

KEY Part #: K7359637

[14807पीसी स्टक]

    भाग संख्या:
    K4B1G0846I-BYMA
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: GDDR5, SLC Nand, HBM Flarebolt, HBM Aquabolt, LPDDR4X, DDR4, GDDR6 and DDR3 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4B1G0846I-BYMA electronic components. K4B1G0846I-BYMA can be shipped within 24 hours after order. If you have any demands for K4B1G0846I-BYMA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B1G0846I-BYMA उत्पाद गुणहरू

    भाग संख्या : K4B1G0846I-BYMA
    निर्माता : Samsung Semiconductor
    वर्णन : 1 Gb 128M x 8 1866 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 1 Gb
    Org। : 128M x 8
    गति : 1866 Mbps
    भोल्टेज : 1.35 V
    अस्थायी। : 0 ~ 85 °C
    प्याकेज : 78FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Rolls Out Industry’s First 8GB LPDDR4 DRAM Package
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Memory Solutions for Automotive
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Autonomous Driving and the Quest for Safety
    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    तपाईलाई पनि चासो लाग्न सक्छ
    • K3UH5H50AM-AGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH5H50AM-EGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH5H50AM-JGCL

      Samsung Semiconductor

      32 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 432FBGA Mass Production.

    • K3UH6H60BM-AGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    • K3UH6H60BM-EGCL

      Samsung Semiconductor

      48 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 376FBGA Mass Production.

    • K3UH7H70AM-AGCL

      Samsung Semiconductor

      64 Gb x64 4266 Mbps 1.8 / 1.1 / 0.6 V -25 ~ 85 °C 556FBGA Mass Production.

    तातो पार्ट्स