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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BCNB

Samsung Semiconductor - K4B2G0846F-BCNB

KEY Part #: K7359651

[16996पीसी स्टक]

    भाग संख्या:
    K4B2G0846F-BCNB
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: HBM Flarebolt, GDDR6, DDR4, MODULE, HBM Aquabolt, SLC Nand, LPDDR4X and LPDDR4 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4B2G0846F-BCNB electronic components. K4B2G0846F-BCNB can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BCNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BCNB उत्पाद गुणहरू

    भाग संख्या : K4B2G0846F-BCNB
    निर्माता : Samsung Semiconductor
    वर्णन : 2 Gb 256M x 8 2133 Mbps 1.5 V 0 ~ 85 °C 78FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 2 Gb
    Org। : 256M x 8
    गति : 2133 Mbps
    भोल्टेज : 1.5 V
    अस्थायी। : 0 ~ 85 °C
    प्याकेज : 78FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Autonomous Driving and the Quest for Safety
    Samsung Z-SSD SZ985
    Mission Peak Reference Server System for NGSFF SSD
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Evolving Mobile Solutions: Samsung at MWC 2018
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    [Video] The Future of Autonomous Driving: Samsung’s Memory Component Solutions
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    High Bandwidth Memory is Catching on for Data-intensive Computing
    The Ultra-Low Latency SSD, Z-SSD
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
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