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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

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  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. DDR3
  5. K4B4G1646D-BYH9

Samsung Semiconductor - K4B4G1646D-BYH9

KEY Part #: K7359695

[20056पीसी स्टक]

    भाग संख्या:
    K4B4G1646D-BYH9
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: HBM Flarebolt, LPDDR4X, SLC Nand, MODULE, LPDDR4, DDR3, DDR4 and LPDDR5 ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor K4B4G1646D-BYH9 electronic components. K4B4G1646D-BYH9 can be shipped within 24 hours after order. If you have any demands for K4B4G1646D-BYH9, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G1646D-BYH9 उत्पाद गुणहरू

    भाग संख्या : K4B4G1646D-BYH9
    निर्माता : Samsung Semiconductor
    वर्णन : 4 Gb 256M x 16 1333 Mbps 1.35 V 0 ~ 85 °C 96FBGA Mass Production
    श्रृंखला : DDR3
    घनत्व : 4 Gb
    Org। : 256M x 16
    गति : 1333 Mbps
    भोल्टेज : 1.35 V
    अस्थायी। : 0 ~ 85 °C
    प्याकेज : 96FBGA
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Speed for the next generation of mobile devices
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Evolving Mobile Solutions: Samsung at MWC 2018
    SSDs, DRAM and gaming: Unlocking a new level of performance
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Autonomous Driving and the Quest for Safety
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    तपाईलाई पनि चासो लाग्न सक्छ
    • M378A1K43BB1-CPB

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      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CRC

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      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43BB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 EOL announced.

    • M378A1K43CB2-CPB

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2133 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CRC

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2400 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    • M378A1K43CB2-CTD

      Samsung Semiconductor

      DDR4 UDIMM 8 GB 1R x 8 2666 Mbps 1.2 V 288 (1G x 8) x 8 Mass Production.

    तातो पार्ट्स