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यदि तपाईंको स्थान सूचीबद्ध गरिएको छैन भने, कृपया निम्न मध्ये एउटा चयन गर्नुहोस्:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. घर
  2. उत्पादनहरू
  3. DRAM
  4. MODULE
  5. M393A8K40B2B-CTC

Samsung Semiconductor - M393A8K40B2B-CTC

KEY Part #: K7359909

[26035पीसी स्टक]

    भाग संख्या:
    M393A8K40B2B-CTC
    निर्माता:
    Samsung Semiconductor
    विस्तृत विवरण:
    DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production.
    Manufacturer's standard lead time:
    स्टक मा
    आफ्नो जीवन:
    एक वर्ष
    बाट चिप:
    हंगकंग
    RoHS:
    भुक्तानी विधि:
    ढुवानी मार्ग:
    परिवार कोटिहरू:
    KEY कम्पोनेन्ट्स कं, लिमिटेड एक इलेक्ट्रोनिक कम्पोनेन्ट वितरक हो जसले निम्न सहित उत्पादन कोटीहरू प्रदान गर्दछ: HBM Flarebolt, GDDR6, DDR4, LPDDR4, GDDR5, DDR3, LPDDR3 and HBM Aquabolt ...
    प्रतिस्पर्धी लाभ:
    We specialize in Samsung Semiconductor M393A8K40B2B-CTC electronic components. M393A8K40B2B-CTC can be shipped within 24 hours after order. If you have any demands for M393A8K40B2B-CTC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A8K40B2B-CTC उत्पाद गुणहरू

    भाग संख्या : M393A8K40B2B-CTC
    निर्माता : Samsung Semiconductor
    वर्णन : DDR4 RDIMM 64 GB 4R x 4 2400 Mbps 1.2 V 288 (2H 3DS 8G x 4) x 36 Mass Production
    श्रृंखला : DDR3
    DDR : DDR4
    Dimm प्रकार : RDIMM
    घनत्व : 64 GB
    रैंक संगठन x। : 4R x 4
    गति : 2400 Mbps
    भोल्टेज : 1.2 V
    पिन को न : 288
    घटक संगठन : (2H 3DS 8G x 4) x 36
    उत्पादन स्थिति : Mass Production

    ताजा समाचारहरू

    Driving the Artificial Intelligence Evolution with In-Memory Computing
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Memory Solutions for Automotive
    Samsung Now Mass Producing Industry’s First, 20-Nanometer 6Gb LPDDR3 Mobile DRAM
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    5G and Memory - from Connected Thinking to Connected Living
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Inside the building blocks of the 5G future
    High Bandwidth Memory is Catching on for Data-intensive Computing
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